Nonlinear design : FETs and HEMTs /
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages an...
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Main Author: | Ladbrooke, Peter (Author) |
---|---|
Format: | Electronic eBook |
Language: | English |
Published: |
[United States] :
Artech,
[2021]
|
Subjects: | |
Online Access: | CONNECT |
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