Nonlinear design : FETs and HEMTs /
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages an...
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| Main Author: | |
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| Format: | Electronic eBook |
| Language: | English |
| Published: |
[United States] :
Artech,
[2021]
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| Subjects: | |
| Online Access: | CONNECT |
