Characterization of defects and deep levels for GaN power devices /

This book focuses on defects in GaN based on the most up-to-date intrinsic material properties, and addresses deep levels and their analytical methods within the wide bandgap of GaN. It demonstrates nanoscale structures of extended defects in GaN using atomic-scale transmission electron microscopy....

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Bibliographic Details
Other Authors: Narita, Tetsuo (Editor), Kachi, Tetsu (Editor)
Format: Electronic eBook
Language:English
Published: Melville, New York : AIP Publishing Books, 2020.
Edition:First edition.
Subjects:
Online Access:CONNECT

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245 0 0 |a Characterization of defects and deep levels for GaN power devices /  |c edited by Tetsuo Narita, Tetsu Kachi. 
250 |a First edition. 
264 1 |a Melville, New York :  |b AIP Publishing Books,  |c 2020. 
264 4 |c ©2020 
300 |a 1 online resource :  |b illustrations (some color) 
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500 |a Published online by AIP Publishing, November 2020. 
504 |a Includes bibliographical references and index. 
505 0 |a Introduction / Tetsuo Narita and Tetsu Kachi -- Methods of analyzing deep levels in GaN / Tetsuo Narita and Yutaka Tokuda -- Deep levels in GaN / Tetsuo Narita and Yutaka Tokuda -- Structural defects in Mg-doped GaN: TEM analysis / Nobuyuki Ikarashi -- Combined APT and STEM analyses / Ashutosh Kumar and Tadakatsu Ohkubo -- Local lattice plane orientation mapping of entire GaN wafer / Osami Sakata and Jaemyung Kim -- Multiphoton microscopy / Tomoyuki Tanikawa -- Future challenges: defects in GaN power devices due to fabrication processes / Tetsuo Narita and Tetsu Kachi. 
520 |a This book focuses on defects in GaN based on the most up-to-date intrinsic material properties, and addresses deep levels and their analytical methods within the wide bandgap of GaN. It demonstrates nanoscale structures of extended defects in GaN using atomic-scale transmission electron microscopy. The identifi cations of their deep levels and extended defect structures are presented by comparing with reported fi rst-principles calculations. It reviews emerging technologies for defect characterizations using atom probe tomography, synchrotron x-ray diffraction topography in wafer scale, and multiphoton-excitation photoluminescence, which allows for the multidirectional characterization of structural defects. 
588 0 |a Print version record. 
650 0 |a Power electronics. 
650 0 |a Gallium nitride  |x Electric properties. 
650 7 |a Gallium nitride  |x Electric properties.  |2 fast  |0 (OCoLC)fst00937296 
650 7 |a Power electronics.  |2 fast  |0 (OCoLC)fst01074238 
700 1 |a Narita, Tetsuo,  |e editor 
700 1 |a Kachi, Tetsu,  |e editor 
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