Characterization of defects and deep levels for GaN power devices /
This book focuses on defects in GaN based on the most up-to-date intrinsic material properties, and addresses deep levels and their analytical methods within the wide bandgap of GaN. It demonstrates nanoscale structures of extended defects in GaN using atomic-scale transmission electron microscopy....
Saved in:
| Other Authors: | , |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Melville, New York :
AIP Publishing Books,
2020.
|
| Edition: | First edition. |
| Subjects: | |
| Online Access: | CONNECT |
