Advanced nano- and piezoelectric materials and their applications /
The advanced materials and devices based on nanotechnology and piezoelectric approaches have found wide applications in modern science and techniques. Tremendous interest to similar studies is supported owing to fast improvement of theoretical, experimental and numerical methods. These achievements...
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| Format: | Electronic eBook |
| Language: | English |
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New York :
Nova Science Publishers,
[2014]
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| Series: | Materials science and technologies series.
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| Subjects: | |
| Online Access: | CONNECT |
Table of Contents:
- ADVANCED NANO- AND PIEZOELECTRIC MATERIALS AND THEIR APPLICATIONS; ADVANCED NANO- AND PIEZOELECTRIC MATERIALS AND THEIR APPLICATIONS; Library of Congress Cataloging-in-Publication Data; Contents; Preface; Chapter 1: Compatibility of Chemical Elements on Grain Boundaries and Its Influence on Wear Resistance of Polycrystalline Materials; Abstract; 1. Introduction; 2. Choice of Cluster Model; 3. Calculations of Binding Energy of Clusters Containing Adsorbed and Segregated Atoms; 4. Calculations of Binding Energy of Clusters Containing Segregated Atoms of Two Elements.
- 5. Potential Energy Curves for Adsorbed and Segregated AtomsConclusion; Acknowledgements; References; Chapter 2: Development and Study of Silicon Dioxide Nanostructured Films Forming on Semiconductor Structure Surface; Abstract; 1. Introduction; 2. Characteristics of Silicon Dioxide Nanostructured Films Formed by Different Methods; 2.1. Characteristics of Processing SiO2 Films during Rapid Thermal Annealing; 2.2. Processing Dielectric Thin Films SiO2 on SiC by Thermal Oxidation; 2.3. Silicon Dioxide Deposition with UV and Thermal Activation.
- 3. Experimental Systems Used for Photon Stimulated Oxidation of Semiconductors4. Experimental Results; 4.1. Characteristics of Nanostructured SiO2 Films on SiC Obtained by Thermal Oxidation; 4.2. Characteristics of Nanostructurized SiO2 Films Formed Using Tetraethoxysilane Decomposition at Exposure on Infrared and UV Light; Acknowledgments; References; Chapter 3: Methods to Study Modified Aluminum Silicates; Abstract; 1. Introduction; 2. Experimental Methods in the Study of Layered; Aluminum Silicates; 3. Simulation of Electronic Structure and Layered Aluminosilicate Properties.
- AcknowledgmentsReferences; Chapter 4: Investigations of Defect Formation during Sapphire Crystal Growth; 1Engineering Technological Academy, Southern Federal University, Taganrog, Russia; 2Vorovich Mechanics and Applied Mathematics Research Institute, ; Southern Federal University, Rostov-on-Don, Russia; Abstract; 1. Introduction; 2. Heat Physical Procceses Influence on Formation of Bubbles during Growth of Crystals; 2. Research of Internal Stresses in the Crystal by Polarizing and Optical Method; 3. Model of Relaxation of Stresses in Sapphire Crystals.
- 4. Study of Sapphire Sample Defects by Different MethodsConclusion; References; Chapter 5: Physics and Design of Multi-Functional Ceramic Materials with Special Electrical and Magnetic Properties; Abstract; 1. The Invar Effect and the Devil's Staircase in Alkali and Alkaline Earth Niobates; 1.1. Introduction; 1.2. Objects of Study: Methods of Sample Preparation and Measurement; 1.3. Results and Discussion; 1.4. Conclusion; 2. Features of the Dielectric Spectra of Niobate-Based Materials Modified with Manganese and Copper Oxides; 2.1. Introduction; 2.2. Experiment; 2.3. Results and Discussion.
