GaN-based materials and devices : growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
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| Other Authors: | , |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
River Edge, N.J. ; London :
World Scientific.,
©2004.
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| Series: | Selected topics in electronics and systems ;
v. 33. |
| Subjects: | |
| Online Access: | CONNECT |
Table of Contents:
- Materials Properties of Nitrides. Summary/ S.L. Rumyantsev, M.S. Shur, and M.E. Levinshtein
- Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/ A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis
- Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/ S. Einfeldt, Z.J. Reitmeier, and R.F. Davis
- Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/ P.R. Tavernier, E.V. Etzkorn, and D.R. Clarke
- Cracking of GaN Films/ E.V. Etzkorn and D.R. Clarke
- Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/ J. Lee, R.F. Davis, and R.J. Nemanich
- Electronic Properties of GaN(0001)
- Dielectric Interfaces/ T.E. Cook, Jr., C.C. Fulton, W.J. Mecouch, R.F. Davis, G. Lucovsky, and R.J. Nemanich
- Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/ K.W. Kim, V.A. Kochelap, V.N. Sokolov, and S.M. Komirenko
- High Field Transport in AlN/ R. Collazo, R. Schlesser, and Z. Sitar
- Generation-Recombination Noise in GaN-Based Devices/ S.L. Rumyantsev, N. Pala, M.S. Shur, M.E. Levinshtein, R. Gaska, M. Asif Khan, and G. Simin
- Insulated Gate 111-N Heterostructure Field-Effect Transistors/ G. Simin, M. Asif Khan, M.S. Shur, and R. Gaska
- High Voltage AIGaN/GaN Heterojunction Transistors/ L.S. McCarthy, N-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U.K. Mishra
- Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/ Y. Gao, I. Ben-Yaacov, U. Mishra, and E. Hu
- n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/ S. Estrada, E. Hu, and U. Mishra.
