Crystal growth for beginners : fundamentals of nucleation, crystal growth and epitaxy /
This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of math...
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Singapore ; River Edge, N.J. :
World Scientific,
©2003.
|
| Edition: | 2nd ed. |
| Subjects: | |
| Online Access: | CONNECT |
Table of Contents:
- Preface; CONTENTS; Chapter 1 Crystal-Ambient Phase Equilibrium; 1.1 Equilibrium of Infinitely Large Phases; 1.2 Supersaturation; 1.3 Equilibrium of Finite Phases; 1.3.1 Equation of Laplace; 1.3.2 Equation of Thomson-Gibbs; 1.4 Equilibrium Shape of Crystals; 1.4.1 Theorem of Gibbs-Curie-Wulff; 1.4.2 Polar diagram of the surface energy; 1.4.3 Herring's formula; 1.4.4 Stability of crystal surfaces; 1.5 Atomistic Views on Crystal Growth; 1.5.1 Equilibrium of infinitely large crystal with the ambient phase
- The concept of half-crystal position.
- 1.5.2 Equilibrium finite crystal-ambient phase
- The concept of mean separation work1.5.3 Equilibrium 2D crystal-ambient phase; 1.5.4 Equilibrium shape of crystals
- Atomistic approach; 1.5.5 Equilibrium vapor pressure of a 2D crystal on a foreign substrate; 1.6 Equilibrium Structure of Crystal Surfaces; 1.6.1 Classification of crystal surfaces; 1.6.2 Equilibrium structure of a step; 1.6.3 Equilibrium structure of F faces; 1.6.4 Kinetic roughness; Chapter 2 Nucleation; 2.1 Thermodynamics; 2.1.1 Homogeneous formation of nuclei; 2.1.2 Heterogeneous formation of 3D nuclei.
- 2.1.3 Heterogeneous formation of elastically strained 3D nuclei2.1.4 Formation of 2D nuclei; 2.1.5 Mode of nucleation on a foreign substrate; 2.2 Rate of Nucleation; 2.2.1 General formulation; 2.2.2 The equilibrium state; 2.2.3 Steady state nucleation rate; 2.2.4 Nucleation of liquids from vapors; 2.2.5 Statistical contributions; 2.2.6 Nucleation from solutions and melts; 2.2.7 Rate of heterogeneous nucleation; 2.2.8 Rate of 2D nucleation; 2.2.9 Atomistic theory of nucleation; 2.2.10 Nonsteady state nucleation; 2.2.11 Mass crystallization and saturation nucleus density.
- 2.2.12 Ostwald's step ruleChapter 3 Crystal Growth; 3.1 Normal Growth of Rough Crystal Faces; 3.2 Layer Growth of Flat Faces; 3.2.1 Rate of advance of steps; 3.2.2 Spiral growth of F faces; 3.2.3 Growth by 2D nucleation; 3.2.4 Influence of surface anisotropy
- growth of Si(001) vicinal surface; 3.2.5 Ehrlich-Schwoebel barrier and its consequences; 3.3 Kinematic Theory of Crystal Growth; 3.4 A Classical Experiment in Crystal Growth; Chapter 4 Epitaxial Growth; 4.1 Basic Concepts and Definitions; 4.2 Structure and Energy of Epitaxial Interfaces; 4.2.1 Boundary region.
- 4.2.2 Models of epitaxial interfaces4.2.3 Misfit dislocations; 4.2.4 Frank-van der Merwe model of thin overlayer; 4.2.5 ID model with non-Hookean interatomic forces; 4.2.6 Van der merwe model of thick overgrowth; 4.2.7 Thickening overgrowth; 4.2.8 The Volterra approach; 4.3 Mechanism of Growth of Epitaxial Films; 4.3.1 Classification of the growth modes; 4.3.2 Experimental evidence; 4.3.3 General tendencies; 4.3.4 Thermodynamics of epitaxy; 4.3.5 Kinetics of growth of thin epitaxial films; 4.3.6 Surfactants in epitaxial growth; References; Index.
