Surface properties of electronic materials /

Surface properties of electronic materials /

The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis.

Saved in:
Bibliographic Details
Other Authors: King, D. A. 1939-, Woodruff, D. P.
Format: Electronic eBook
Language:English
Published: Amsterdam ; New York : Elsevier Scientific Pub. Co., 1988.
Series:Chemical physics of solid surfaces and heterogeneous catalysis ; v. 5.
Subjects:
Surface chemistry.
Surfaces (Physics)
Electronics > Materials > Surfaces.
Online Access:CONNECT

MARC

LEADER 00000cam a2200000 a 4500
001 in00006556492
006 m o d
007 cr un|||||||||
008 121112s1988 ne a ob 001 0 eng d
005 20240708135217.5
035 |a 1WRLDSHRocn817183897 
040 |a UIU  |b eng  |e pn  |c UIU  |d N$T  |d E7B  |d OCLCF  |d YDXCP  |d OCLCQ  |d DEBSZ  |d LEAUB  |d VLY  |d S2H  |d OCLCO  |d OCLCQ  |d OCLCO  |d OCLCL  |d OCLCQ  |d OCLCL 
019 |a 847526929  |a 1162101430 
020 |a 9780444601308  |q (electronic bk.) 
020 |a 0444601309  |q (electronic bk.) 
020 |z 0444427821  |q (v. 5) 
020 |z 9780444427823  |q (v. 5) 
035 |a (OCoLC)817183897  |z (OCoLC)847526929  |z (OCoLC)1162101430 
050 4 |a QD506  |b .C44 vol. 5 
082 0 4 |a 541.3453 
049 |a TXMM 
245 0 0 |a Surface properties of electronic materials /  |c edited by D.A. King and D.P. Woodruff. 
260 |a Amsterdam ;  |a New York :  |b Elsevier Scientific Pub. Co.,  |c 1988. 
300 |a 1 online resource (474 pages) :  |b illustrations. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a The chemical physics of solid surfaces and heterogeneous catalysis ;  |v v. 5 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
505 0 |a Front Cover; Surface Properties of Electronic Materials; Copyright Page; Preface; Table of Contents; Chapter 1. Surface science and electronic materials. An overview; 1. Introduction; 2. Semiconductor surfaces and interfaces; 3. Metal-semiconductor interfaces; 4. Semiconductor-semiconductor interfaces; References; Chapter 2. Structural and electronic properties of elemental semiconductors and surfaces; 1. Introduction; 2. Bonding and electronic states in bulk silicon; 3. The atomic geometry of the Si(100) (2 X 1) surface; 4. The atomic geometry of the cleaved Si (111 ) (2 X 1) surface 
505 8 |a 5. The atomic geometry of the equilibrium Si(111) (7 X 7) surface6. The ""new"" reconstructions; Acknowledgements; References; Chapter 3. Atomic geometry and electronic structure of tetrahedrally coordinated compound semiconductor interfaces; 1. Introduction; 2. Zincblende(110); 3. Adsorbate structures on zincblende(110); 4. Polar surfaces of zincblende structure materials; 5. Wurtzite structure materials. ZnO; 6. Synopsis; Acknowledgements; References; Chapter 4. Adsorption and Schottky barrier formation on compound semiconductor surfaces; 1. Introduction; 2. Gas-phase adsorption 
505 8 |a 3. Semiconductor adsorption on semiconductor substrates. Heterojunction interfaces4. Adsorption of metals. Schottky barrier formation; Acknowledgements; References; Chapter 5. Adsorption on elemental semiconductors; 1. Introduction; 2. Preparation of clean surfaces; 3. Intrinsic structure of Si surfaces; 4. Intrinsic structure of Ge surfaces; 5. Adsorption on Si; 6. Adsorption on Ge; 7. Summary; Acknowledgements; References; Chapter 6. Adsorption and reaction of metals on elemental semiconductors; 1. Introduction; 2. Structural evidence for the reaction at room temperature 
505 8 |a 3. The electronic states of silicides4. The interface reaction as seen with electronic state spectroscopy; 5. A scheme for interface growth at room temperature; 6. Selected topics connected with the scheme of interface growth; References; Chapter 7. Molecular beam epitaxy of III-V compounds. Aspects of growth kinetics and dynamics; 1. Introduction; 2. The GaAs(001) surface; 3. Thermodynamic and kinetic factors involved in the MBE process; 4. Growth dynamics; Acknowledgements; References; Chapter 8. Molecular beam epitaxy of silicon and related materials; 1. Introduction 
505 8 |a 2. Molecular beam epitaxy3. The technology of MBE; 4. Substrate preparation; 5. Crystallographic perfection; 6. Evaluation of undoped homoepitaxial silicon; 7. Doping; 8. Silicides; 9. Silicon-on-insulator structures; 10. The Six Ge1-x system; 11. Device applications; 12. Future prospects; Acknowledgements; References; Chapter 9. Molecular beam epitaxy of insulators, metastable phases and II-VI compounds; 1. Introduction; 2. Factors controlling the range of materials accessible to MBE growth techniques; 3. MBE growth and properties of epitaxial insulators 
520 |a The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis. 
546 |a English. 
500 |a ScienceDirect eBook - Chemistry pre-2007 (Elsevier and Woodhead)  |5 TMurS 
650 0 |a Surface chemistry. 
650 0 |a Surfaces (Physics) 
650 0 |a Electronics  |x Materials  |x Surfaces. 
700 1 |a King, D. A.  |q (David Anthony),  |d 1939-  |1 https://id.oclc.org/worldcat/entity/E39PBJxd63763WH68ybMgpHt8C 
700 1 |a Woodruff, D. P. 
730 0 |a WORLDSHARE SUB RECORDS 
758 |i has work:  |a Surface properties of electronic materials (Text)  |1 https://id.oclc.org/worldcat/entity/E39PCGdjcdyYFfJPxXb46hxHJC  |4 https://id.oclc.org/worldcat/ontology/hasWork 
776 0 8 |i Print version:  |t Surface properties of electronic materials.  |d Amsterdam ; New York : Elsevier Scientific Pub. Co., 1988  |z 9780444427823  |w (OCoLC)18666548 
830 0 |a Chemical physics of solid surfaces and heterogeneous catalysis ;  |v v. 5. 
856 4 0 |u https://ezproxy.mtsu.edu/login?url=https://www.sciencedirect.com/science/bookseries/15710785/5  |z CONNECT  |3 Elsevier  |t 0 
949 |a ho0 
994 |a 92  |b TXM 
998 |a wi  |d z 
999 f f |s 15cf913c-6e58-4426-8e97-bc75cf3dceac  |i 92c2bdf4-ca6c-4425-9534-ced1e0096b3e  |t 0 
952 f f |a Middle Tennessee State University  |b Main  |c James E. Walker Library  |d Electronic Resources  |t 0  |e QD506 .C44 vol. 5  |h Library of Congress classification 

Similar Items