75th anniversary of the transistor /
"A transistor is a miniature semiconductor that regulates or controls current or voltage flow in addition amplifying and generating these electrical signals and acting as a switch/gate for them. Typically, transistors consist of three layers, or terminals, of a semiconductor material, each of w...
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| Format: | Electronic eBook |
| Language: | English |
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Hoboken, New Jersey :
Wiley,
[2023]
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| Subjects: | |
| Online Access: | CONNECT |
MARC
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| 245 | 0 | 0 | |a 75th anniversary of the transistor / |c edited by Arokia Nathan, Samar Saha, Ravi M. Todi. |
| 246 | 3 | |a Seventy-fifth anniversary of the transistor | |
| 263 | |a 2311 | ||
| 264 | 1 | |a Hoboken, New Jersey : |b Wiley, |c [2023] | |
| 264 | 4 | |c ©2023 | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
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| 520 | |a "A transistor is a miniature semiconductor that regulates or controls current or voltage flow in addition amplifying and generating these electrical signals and acting as a switch/gate for them. Typically, transistors consist of three layers, or terminals, of a semiconductor material, each of which can carry a current. When working as an amplifier, a transistor transforms a small input current into a bigger output current. As a switch, it can be in one of two distinct states -- on or off -- to control the flow of electronic signals through an electrical circuit or electronic device. In small quantities, transistors are used to create simple electronic switches. They are the basic elements in integrated circuits (ICs), which consist of a large number of transistors interconnected with circuitry and baked into a single silicon microchip"-- |c Provided by publisher. | ||
| 588 | |a Description based on print version record and CIP data provided by publisher; resource not viewed. | ||
| 505 | 0 | |a Editor Biography xiii -- Preface xv -- 1 The First Quantum Electron Device 1 Leo Esaki -- 2 IEEE Electron Devices Society: A Brief History 3 Samar K. Saha -- 2.1 Introduction 3 -- 2.2 Origins of EDS 4 -- 2.3 Growth of EDS 6 -- 2.4 Publications 10 -- 2.5 Conferences 12 -- 2.6 Awards and Recognition 14 -- 2.7 Conclusion 14 -- 3 Did Sir J.C. Bose Anticipate the Existence of p- and n-Type Semiconductors in His Coherer/Detector Experiments? 17 Prasanta Kumar Basu -- 3.1 Introduction 17 -- 3.2 J.C. Bose: A Brief Biography 18 -- 3.3 Bose's Work on Detectors 19 -- 3.4 Mott's Remark 21 -- 3.5 Understanding Semiconductors and Doping 21 -- 3.6 Interpretation of Mott's Remark 23 -- 3.7 Conclusion 25 -- 4 The Point-Contact Transistor: A Revolution Begins 29 John M. Dallesasse and Robert B. Kaufman -- 4.1 Introduction 29 -- 4.2 Background and Motivation 30 -- 4.3 Inventors' Understanding How a Point-Contact Transistor Operates 31 -- 4.4 Recreating the Point-Contact Transistor 33 -- 4.5 Concluding Remarks 40 -- 5 On the Shockley Diode Equation and Analytic Models for Modern Bipolar Transistors 43 T. H. Ning -- 5.1 Introduction 43 -- 5.2 Adaptation of Shockley Diode Equation to Modern Bipolar Transistors 45 -- 5.3 Modern Bipolar Transistors Structures 46 -- 5.4 Analytic Models for Modern Bipolar Transistors 48 -- 5.5 Discussion 49 -- 6 Junction-Less Field Effect Transistors: The First Transistor to be Conceptualized 51 Mamidala Jagadesh Kumar and Shubham Sahay -- 6.1 Introduction 51 -- 6.2 Structure and Operation 52 -- 6.3 Salient Features of JLFETs 55 -- 6.4 Challenges for JLFETs 58 -- 6.5 Unconventional Applications of JL Architecture 59 -- 6.6 Conclusions 61 -- 7 The First MOSFET Design by J. Lilienfeld and a Long Journey to Its Implementation 65 Hiroshi Iwai -- 7.1 Introduction 65 -- 7.2 Demand for the Development of the Solid-State Amplifier and Its Difficulty 66 -- 7.3 Grid-Inserted MESFETs 68 -- 7.4 Lilienfeld Patents for the MESFET and MOSFET 69 -- 7.5 Necessary Conditions for Successful MOSFET Operation, and MOSFET Development Chronology 72 -- 7.6 Status of the Semiconductor Physics at the Lilienfeld Period (in the 1920s) and Thereafter 73 -- 7.7 Improvement of Si and Ge Material Quality and Discovery of the pn Junction in the 1940s 74 -- 7.8 H. Welker's MISFET with Inversion Channel in 1945 75 -- 7.9 Shockley's Group Study for MOSFET from 1945 to 1947 76 -- 7.10 Technology Development in the 1950s Until the Successful MOSFET Operation in 1960 79 -- 7.11 Success of MOSFET Operation by D. Kahng and M. Attala in 1960 81 -- 7.12 After the First Successful Operation of the MOSFET 82 -- 7.13 Summary and Conclusions 82 -- 8 The Invention of the Self-Aligned Silicon Gate Process 89 Robert E. Kerwin -- 9 The Application of Ion Implantation to Device Fabrication: The Early Days 95 Alfred U. MacRae -- 9.1 Introduction 95 -- 9.2 Device Fabrication 96 -- 9.3 Summary 99 -- 10 Evolution of the MOSFET: From Microns to Nanometers 101 Yuan Taur -- 10.1 Introduction 101 -- 10.2 The Early Days: Before 1980 102 -- 10.3 From 1980 to 2000 103 -- 10.4 The Latest: After 2000 109 -- 10.5 Conclusion 113 -- 11 The SOI Transistor 115 Sorin Cristoloveanu -- 11.1 The Beginnings 115 -- 11.2 The Renaissance 116 -- 11.3 The Smart-Cut Dynasty 119 -- 11.4 Special Mechanisms in FD-SOI MOSFET 122 -- 11.5 A Selection of Innovating Devices 126 -- 11.6 The Future 130 -- 12 FinFET: The 3D Thin-Body Transistor 135 Chenming Hu -- 12.1 The Show Stopper 135 -- 12.2 The Cause of the Power Crises 135 -- 12.3 The Real Cause of the Power Crises 137 -- 12.4 A DARPA Request for Proposal 138 -- 12.5 The Challenges and Team Work 139 -- 12.6 Further Advancements by Industry 141 -- 12.7 Conclusion 144 -- 13 Historical Perspective of the Development of the FinFET and Process Architecture 145 Digh Hisamoto -- 13.1 Introduction 145 -- 13.2 Requirements for the End of CMOS Scaling 146 -- 13.3 Restrictions of Planar Process Technology 148 -- 13.4 Prompted Device/Process Technology Evolution by FinFET 151 -- 13.5 Conclusion 152 -- 14 The Origin of the Tunnel FET 155 Gehan A. J. Amaratunga -- 14.1 Background 155 -- 14.2 Conception 156 -- 14.3 Realization 157 -- 14.4 Relevance 159 -- 14.5 Prospects 159 -- 15 Floating-Gate Memory: A Prime Technology Driver of the Digital Age 163 S. M. Sze -- 15.1 Introduction 163 -- 15.2 The Charge-Storage Concept 164 -- 15.3 Early Device Structures 167 -- 15.4 Multi-Level Cells and 3D Structures 169 -- 15.5 Applications 171 -- 15.6 Scaling Challenges 173 -- 15.7 Alternative Structures 174 -- 15.8 Conclusion 175 -- 16 Development of ETOX NOR Flash Memory 179 Stefan K. Lai -- 16.1 Introduction 179 -- 16.2 Background 179 -- 16.3 Not the Perfect Solution 181 -- 16.4 ETOX Development Challenges 182 -- 16.5 Building a Business 183 -- 16.6 Closing Words 184 -- 17 History of MOS Memory Evolution on DRAM and SRAM 187 Mitsumasa Koyanagi -- 17.1 Introduction 187 -- 17.2 Revolutionary Technologies in DRAM History 187 -- 17.3 Revolutionary Technologies in SRAM History 202 -- 17.4 Summary 210 -- 18 Silicon-Germanium Heterojunction Bipolar Transistors: A Retrospective 215 Subramanian S. Iyer and John D. Cressler -- 18.1 Introduction (JDC) 215 -- 18.2 Some History from Early Days at IBM Research (SSI) 218 -- 18.3 SiGe Epitaxy and Making the First SiGe Transistor (SSI) 221 -- 18.4 MBE vs. UHV/CVD vs. APCVD for SiGe epi (SSI) 224 -- 18.5 Putting Physics to Work - The Properties of SiGe HBTs (JDC) 225 -- 18.6 SiGe BiCMOS: Devices to Circuits to Systems (JDC and SSI) 228 -- 18.7 Using SiGe in Extreme Environments (JDC) 231 -- 18.8 New Directions (JDC and SSI) 234 -- 18.9 Some Parting Words (SSI) 235 -- 19 The 25-Year Disruptive Path of InP/GaAsSb Double Heterojunction Bipolar Transistors 239 Colombo R. Bolognesi -- 19.1 Introduction 239 -- 19.2 Phase I: Simon Fraser Years (1995-2006) 242 -- 19.3 Phase II: ETH Years (2006-2022) 246 -- 19.4 Response to Innovation 248 -- 19.5 Final Words 249 -- 20 The High Electron Mobility Transistor: 40 Years of Excitement and Surprises 253 Jesús A. del Alamo -- 20.1 Introduction 253 -- 20.2 HEMT Electronics 254 -- 20.3 Modulation-Doped Structures in Physics 257 -- 20.4 Exciting Prospects 258 -- 20.5 Conclusions 259 -- 21 The Thin Film Transistor and Emergence of Large Area, Flexible Electronics and Beyond 263 Yue Kuo, Jin Jang, and Arokia Nathan -- 21.1 Birth of Large Area Electronics 263 -- 21.2 Polycrystalline Silicon and Oxide Thin Film Transistor 265 -- 21.3 Trends in TFT Development 266 -- 22 Imaging Inventions: Charge-Coupled Devices 273 Michael F. Tompsett -- 22.1 Setting the Stage for the Invention of the Charge-Coupled Device (CCD) 273 -- 22.2 The Invention of the CCD 274 -- 22.3 Verifying the CCD Concept 275 -- 22.4 The Invention of CCD Imagers 276 -- 22.5 The First Solid-State Color TV Camera 276 -- 22.6 Mixed Analog Design Modem Chip 278 -- 23 The Invention and Development of CMOS Image Sensors: A Camera in Every Pocket 281 Eric R. Fossum -- 23.1 Introduction 281 -- 23.2 Underlying Technology 282 -- 23.3 Early Solid-State Image Sensors 283 -- 23.4 Invention of CMOS Image Sensors 285 -- 23.5 Photon-Counting CMOS Image Sensors 288 -- 23.6 Conclusion 290 -- 24 From Transistors to Microsensors: A Memoir 293 Henry Baltes -- 24.1 Early Encounters 293 -- 24.2 Integration 293 -- 24.3 Silicon Sensors 294 -- 24.4 Transistor Sensors 294 -- 24.5 CMOS End Fabrication 296 -- 24.6 Outlook 297 -- 25 Creation of the Insulated Gate Bipolar Transistor 299 B. Jayant Baliga -- 25.1 Introduction 299 -- 25.2 Historical Context 300 -- 25.3 The Brock Effect 301 -- 25.4 My IGBT Proposal 301 -- 25.5 The Welch Edict 301 -- 25.6 Manufacturing the First IGBT Product 302 -- 25.7 First IGBT Product Release 303 -- 25.8 IGBT Technology Enhancement 304 -- 25.9 IGBT Evolution 305 -- 25.10 IGBT Applications 306 -- 25.11 IGBT Social Impact 306 -- 25.12 My Sentiments 307 -- 26 The History of Noise in Metal-Oxide-Semiconductor Field-Effect Transistors 309 Renuka P. | |
| 505 | 0 | |a Jindal -- 26.1 Introduction 309 -- 26.2 MOSFET Noise Time Line 310 -- 26.3 Channel Thermal Noise 311 -- 26.4 Induced Gate and Substrate Current Noise 311 -- 26.5 Gate-Drain Current Noise Cross Correlation 312 -- 26.6 Equilibrium Noise 312 -- 26.7 Bulk Charge Effects 312 -- 26.8 Gate Resistance Noise 313 -- 26.9 Substrate Resistance Noise 313 -- 26.10 Substrate and Gate Current Noise 313 -- 26.11 Short-Channel Effects 314 -- 26.12 Effect on Channel Thermal Noise 315 -- 26.13 1/f Noise 316 -- 26.14 Conclusions 316 -- 27 A Miraculously Reliable Transistor: A Short History 323 Muhammad Ashraful Alam and Ahmed Ehteshamul Islam -- 27.1 Introduction: A Transistor is Born 323 -- 27.2 Transistor Reliability in the Proto-Scaling Era 325 -- 27.3 Reliability of Geometric-and Equivalent-Scaling Eras 325 -- 27.4 Conclusions: Reliability Challenges for the Hyper-Scaling and Functional-Scaling Eras 330 -- 28 Technology Computer-Aided Design: A Key Component of Microelectronics' Development 337 Siegfried Selberherr and Viktor Sverdlov -- 28.1 Introduction 337 -- 28.2 Short History 338 -- 28.3 Scaling and Model Complexity 339 -- 28.4 MINIMOS Commercialization and Beyond 342 -- 28.5 Design Technology Co-Optimization at Advanced Nodes 343 -- 28.6 Electron Spin for Microelectronics 343 -- 28.7 Summary and Outlook 344 -- 29 Early Integrated Circuits 349 Willy Sansen -- 30 A Path to the One-Chip Mixed-Signal SoC for Digital Video Systems 355 Akira Matsuzawa -- 30.1 Introduction 355 -- 30.2 Bipolar ADCs at Early Development Stage of Digital TVs 356 -- 30.3 A CMOS ADC for Digital Handy Camcorder 360 -- 30.4 One-Chip Mixed-Signal SoC for DVD 363 -- 31 Historical Perspective of the Nonvolatile Memory and Emerging Computing Paradigms 369 Ming Liu -- 31.1 Introduction 369 -- 31.2 Rise of Solid-State Nonvolatile Memory 370 -- 31.3 ... | |
| 650 | 0 | |a Transistors |x History. | |
| 650 | 0 | |a Integrated circuits |x History. | |
| 700 | 1 | |a Nathan, Arokia, |d 1957- |e editor. | |
| 700 | 1 | |a Saha, Samar K., |e editor. | |
| 700 | 1 | |a Todi, Ravi M., |e editor. | |
| 730 | 0 | |a WILEYEBA | |
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