Wide band gap semiconductor nanowires. 2, Heterostructures and optoelectronic devices /
This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV d...
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| Other Authors: | , |
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| Format: | Electronic eBook |
| Language: | English |
| Published: |
London, UK :
ISTE,
2014.
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| Series: | Electronics engineering series (London, England)
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| Subjects: | |
| Online Access: | CONNECT |
Table of Contents:
- Cover; Title Page; Copyright; Contents; Preface; Part 1: GaN and ZnO Nanowire Heterostructures; Chapter 1: AlGaN/GaN Nanowire Heterostructures ; 1.1. A model system for AlGaN/GaN heterostructures; 1.2. Axial AlGaN/GaN nanowire heterostructures; 1.2.1. Structural properties of axial AlGaN/GaN nanowire heterostructures; 1.2.2. Optical properties of axial AlGaN/GaN nanowire heterostructures; 1.2.3. Lateral internal electric fields; 1.2.4. Axial internal electric fields; 1.2.5. Optical characterization of single-AlGaN/GaN nanowires containing GaN nanodisks; 1.2.6. Electrical transport properties.
- 1.3. AlGaN/GaN core-shell nanowire heterostructures1.3.1. Structural properties; 1.3.2. Optical characteristics; 1.3.3. Electronic properties; 1.3.4. True one-dimensional GaN quantum wire (QWR) second-order self-assembly; 1.4. Application examples; 1.4.1. AlGaN/GaN NWH optochemical gas sensors; 1.4.2. AlGaN/GaN nanowire heterostructure resonant tunneling diodes; 1.5. Conclusions; 1.6. Bibliography; Chapter 2: InGaN Nanowire Heterostructures; 2.1. Introduction; 2.2. Self-assembled InGaN nanowires; 2.3. X-ray characterization of InGaN nanowires.
- 2.4. InGaN nanodisks and nanoislands in GaN nanowires2.5. Selective area growth (SAG) of InGaN nanowires; 2.6. Conclusion; 2.7. Bibliography; Chapter 3: ZnO-Based Nanowire Heterostructures; 3.1. Introduction; 3.2. Designing ZnO-based nanowire heterostructures; 3.3. Growth of ZnxMg1-xO/ZnO core-shell heterostructures by MOVPE; 3.4. Misfit relaxation processes in ZnxMg1-xO/ZnO core-shell structures; 3.5. Optical efficiency of core-shell oxide-based nanowire heterostructures; 3.6. Axial nanowire heterostructures; 3.7. Conclusions and perspectives; 3.8. Bibliography.
- Chapter 4: ZnO and GaN Nanowire-based Type II Heterostructures4.1. Semiconductor heterostructures; 4.2. Type II heterostructures; 4.3. Optimal device architecture; 4.4. Electronic structure of type II core-shell nanowires; 4.5. Synthesis of the type II core-shell nanowires and their signatures; 4.6. Demonstration of type II effects in ZnO-ZnSe core-shell nanowires and photovoltaic devices; 4.7. Summary; 4.8. Acknowledgments; 4.9. Bibliography; Part 2: Integration of GaN and ZnO Nanowires in Optoelectronic Devices; Chapter 5: Axial GaN Nanowire-based LEDs; 5.1. Introduction.
- 5.2. Top-down GaN-based axial nanowire LEDs5.2.1. Fabrication of top-down GaN-based axial nanowires; 5.2.2. Device fabrication of axial nanowire LEDs; 5.2.3. Performance characteristics of top-down axial nanowire LEDs; 5.3. Bottom-up GaN-based axial nanowire LEDs; 5.3.1. Growth techniques; 5.3.2. Doping, polarity and surface charge properties; 5.3.3. Design and typical performance of bottom-up axial nanowire LEDs; 5.3.3.1. Disk/well-in-a-wire LEDs; 5.3.3.2. Double heterostructure nanowire LEDs; 5.3.3.3. Dot-in-a-wire nanowire LEDs; 5.3.3.4. Polarization-induced p-n junction nanowire LEDs.
