Nanoscale CMOS : innovative materials, modeling, and characterization /

This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (IT...

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Bibliographic Details
Other Authors: Balestra, Francis
Format: Electronic eBook
Language:English
Published: London, UK : Hoboken, NJ : ISTE ; Wiley, 2010.
Series:ISTE.
Subjects:
Online Access:CONNECT

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LEADER 00000nam a2200000 a 4500
001 in00006110875
006 m o d
007 cr cnu---unuuu
008 130408s2010 enka ob 001 0 eng d
005 20240125145518.8
010 |z  2010012627 
020 |a 9781118621523 
020 |a 1118621522  |q (electronic bk.) 
020 |a 9781118622490  |q (electronic bk.) 
020 |a 1118622499  |q (electronic bk.) 
020 |z 9781848211803 
020 |z 1848211805 
020 |a 1118622472 
020 |a 9781118622476 
020 |a 1299315607 
020 |a 9781299315600 
035 |a (NhCcYBP)e80fa363d91f485b9a695405a0a7a4bb9781118621523 
035 |a 1wileyeba9781118621523 
040 |a NhCcYBP  |b eng  |c NhCcYBP 
050 4 |a TK7871.99.M44  |b N365 2010eb 
082 0 4 |a 621.39/732  |2 22 
245 0 0 |a Nanoscale CMOS :  |b innovative materials, modeling, and characterization /  |c edited by Francis Balestra. 
260 |a London, UK :  |b ISTE ;  |a Hoboken, NJ :  |b Wiley,  |c 2010. 
300 |a 1 online resource (xix, 652 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a ISTE 
500 |a Wiley EBA  |5 TMurS 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
505 0 |a pt. 1. Novel materials for nanoscale CMOS -- pt. 2. Advanced modeling and simulation for nano-MOSFETs and beyond-CMOS devices -- pt. 3. Nanocharacterization methods. 
520 |a This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future - in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field o. 
546 |a English. 
650 0 |a Metal oxide semiconductors, Complementary  |x Materials. 
700 1 |a Balestra, Francis. 
730 0 |a WILEYEBA 
776 0 8 |i Print version:  |t Nanoscale CMOS.  |d London, UK : ISTE : Hoboken, NJ : Wiley, 2010  |z 9781848211803  |w (DLC) 2010012627 
830 0 |a ISTE. 
856 4 0 |u https://ezproxy.mtsu.edu/login?url=https://onlinelibrary.wiley.com/book/10.1002/9781118621523  |z CONNECT  |3 Wiley  |t 0 
949 |a ho0 
975 |p Wiley UBCM Online Book All Titles thru 2023 
976 |a 6006612 
998 |a wi  |d z 
999 f f |s 19efa4dd-5aa2-4a1a-b9db-51fe5bfa3023  |i 19efa4dd-5aa2-4a1a-b9db-51fe5bfa3023  |t 0 
952 f f |a Middle Tennessee State University  |b Main  |c James E. Walker Library  |d Electronic Resources  |t 0  |e TK7871.99.M44 N365 2010eb  |h Library of Congress classification